Spectroscopy of Nitrogen-Related Centers in Gallium Arsenide
p.867
p.867
Atomic Configuration of Oxygen Negative-U Center in GaAs
p.873
p.873
Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers
p.879
p.879
Positron Annihilation and Scanning Tunneling Microscopy Used to Characterise Defects in Highly Si-Doped GaAs
p.885
p.885
Chemical Trends in Electronic Properties of Arsenic Vacancy-3d Transition Metal Pairs in Gallium Arsenide
p.893
p.893
Perturbed Angular Correlation Measurements and Lattice Site Location of Br in GaAs
p.899
p.899
Equilibrium Vacancies in Te-Doped GaAs Studied by Positron Annihilation
p.905
p.905
Spectroscopic Investigation of Neutral Niobium in GaAs
p.911
p.911
Yb Luminescence Centres in MBE-Grown and Ion-Implanted GaAs
p.917
p.917
Chemical Trends in Electronic Properties of Arsenic Vacancy-3d Transition Metal Pairs in Gallium Arsenide
Abstract:
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Periodical:
Materials Science Forum (Volumes 258-263)
Pages:
893-898
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Online since:
December 1997
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© 1997 Trans Tech Publications Ltd. All Rights Reserved
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