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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Positron Annihilation and Scanning Tunneling...

Positron Annihilation and Scanning Tunneling Microscopy Used to Characterise Defects in Highly Si-Doped GaAs

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

885-892

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.885

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Online since:

December 1997

Authors:

J. Gebauer, Reinhard Krause-Rehberg, C. Domke, Ph. Ebert, K. Urban

Keywords:

GaAs, Positron Annihilation, Scanning Tunneling Microscopy, V_Ga-Si_Ga Complexes

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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