Positron Annihilation and Scanning Tunneling Microscopy Used to Characterise Defects in Highly Si-Doped GaAs

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

885-892

DOI:

10.4028/www.scientific.net/MSF.258-263.885

Citation:

J. Gebauer et al., "Positron Annihilation and Scanning Tunneling Microscopy Used to Characterise Defects in Highly Si-Doped GaAs", Materials Science Forum, Vols. 258-263, pp. 885-892, 1997

Online since:

December 1997

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