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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Site Stability, Diffusion, and Charge Dynamics for...

Site Stability, Diffusion, and Charge Dynamics for Muonium in GaAs

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

849-854

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.849

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Online since:

December 1997

Authors:

T.L. Estle, K.H. Chow, S.F.J. Cox, E.A. Davis, B. Hitti, R.F. Kiefl, R.L. Lichti, C. Schwab

Keywords:

Diffusion, Dynamic, GaAs, Hydrogen, Muonium

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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