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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Homogeneity of Fe-Doped InP Wafers Using Optical...

Homogeneity of Fe-Doped InP Wafers Using Optical Microprobes

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

825-830

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.825

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Online since:

December 1997

Authors:

L.F. Sanz, M.A. Gonzalez, M. Avella, A.L. Alvarez, J. Jiménez, R. Fornari

Keywords:

Fe-Doping, Homogeneity, InP, Photocurrent, Photoluminescence (PL)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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