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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Intrinsic Modulation Doping in InP-Based...

Intrinsic Modulation Doping in InP-Based Heterostructures

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

805-812

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.805

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Online since:

December 1997

Authors:

W.M. Chen, I.A. Buyanova, W.G. Bi, C.W. Tu

Keywords:

Antisite, Doping, HEMTs, InGaAs, InP, Intrinsic, MBE, Off-Stoichiometric

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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