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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Theoretical Studies on Defects in SiC

Theoretical Studies on Defects in SiC

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

739-744

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.739

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Online since:

December 1997

Authors:

Peter Deák, Adam Gali, J. Miró, R. Gutierrez, A. Sieck, Thomas Frauenheim

Keywords:

Nitrogen, Oxygen, Silicon Carbide (SiC), Theory

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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