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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Raman Scattering Analysis of Defects in 6H-SiC...

Raman Scattering Analysis of Defects in 6H-SiC Induced by Ion Implantation

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

727-732

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.727

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Online since:

December 1997

Authors:

A. Pérez-Rodríguez, O. González-Varona, L. Calvo-Barrio, J.R. Morante, H. Wirth, D. Panknin, Wolfgang Skorupa

Keywords:

6H-SiC, Damage, Defect Annealing, Ion Implantation, Raman Scattering

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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