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High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) Structures

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Abstract:

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1441-1444

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1441

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Online since:

February 1998

Authors:

G. Xu, A. Salvador, A.E. Botchkarev, W. Kim, C. Lu, H. Tang, Hadis Morkoç, G. Smith, M. Estes, T. Dang, P. Wolf

Keywords:

Photodetector (PD), Reactive Molecular Beam Epitaxy

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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