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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Table of Contents

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Paper Title Page

SiC Seeded Boule Growth

Authors: Valeri F. Tsvetkov, R.C. Glass, D. Henshall, D. Asbury, Calvin H. Carter Jr.

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Sponsors and Committees

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Preface

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High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport

Authors: G. Augustine, H. McD. Hobgood, Vijay Balakrishna, Greg Dunne, R.H. Hopkins, R.N. Thomas, W.A. Doolittle, A. Rohatgi

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Sublimation Growth of 50mm Diameter SiC Wafers

Authors: Adrian R. Powell, Shao Ping Wang, G. Fechko, George R. Brandes

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Experimental Investigation of 4H-SiC Bulk Crystal Growth

Authors: K. Chourou, Mikhail Anikin, Jean Marie Bluet, V. Lauer, Gérard Guillot, Jean Camassel, Sandrine Juillaguet, O. Chaix-Pluchery, Michel Pons, R. Pons

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Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method

Authors: Atsuto Okamoto, Naohiro Sugiyama, Toshihiko Tani, Nobuo Kamiya

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Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC

Authors: J. Takahashi, Noboru Ohtani, Masakazu Katsuno, S. Shinoyama

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X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals

Authors: S. Milita, R. Pons, J. Baruchel, A. Mazuelas

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Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals

Authors: Stephan G. Müller, Robert Eckstein, Wolfgang Hartung, Dieter Hofmann, M. Kölbl, Gerhard Pensl, Erwin Schmitt, Arnd Dietrich Weber, Albrecht Winnacker

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