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Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

ToC:

Table of Contents

Paper Title Page

Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
Authors: Frank Wischmeyer, D. Leidich, E. Niemann
127
Growth of 4H and 6H SiC Trenches and Around Stripe Mesas
Authors: Nils Nordell, S. Karlsson, Andrey O. Konstantinov
131
Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth
Authors: Kai Christiansen, T. Dalibor, Reinhard Helbig, S. Christiansen, Horst P. Strunk
135
Epitaxial Growth of SiC on α-SiC Using Si2Cl6+C3H8+H2 System
Authors: Shigehiro Nishino, Toshiyuki Miyanagi, Y. Nishio
139
High Growth Rate of α-SiC by Sublimation Epitaxy
Authors: Mikael Syväjärvi, Rositza Yakimova, Mike F. MacMillan, M. Tuominen, A. Kakanakova-Georgieva, Carl G. Hemmingsson, Ivan G. Ivanov, Erik Janzén
143
The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique
Authors: A. Kakanakova-Georgieva, Mike F. MacMillan, Shigehiro Nishino, Rositza Yakimova, Erik Janzén
147
Domain Occurance in SiC Epitaxial Layers Grown by Sublimation
Authors: M. Tuominen, Rositza Yakimova, A. Kakanakova-Georgieva, Mike F. MacMillan, Mikael Syväjärvi, Erik Janzén
151
Epitaxy of High Quality SiC Layers by CST
Authors: Takeru Yoshida, Y. Nishio, S.K. Lilov, Shigehiro Nishino
155
Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC
Authors: Rositza Yakimova, Mikael Syväjärvi, Erik Janzén
159
High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy
Authors: S.V. Rendakova, V. Ivantsov, Vladimir Dmitriev
163

Showing 31 to 40 of 350 Paper Titles

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