High Growth Rate of α-SiC by Sublimation Epitaxy
p.143
p.143
The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique
p.147
p.147
Domain Occurance in SiC Epitaxial Layers Grown by Sublimation
p.151
p.151
Epitaxy of High Quality SiC Layers by CST
p.155
p.155
Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC
p.159
p.159
High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy
p.163
p.163
Thick Film SiC Epitaxy for 'Filling Up' Micropipes
p.167
p.167
A New Radiation Heated 4 Inch LPCVD System for β-SiC Heteroepitaxy
p.171
p.171
Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane
p.175
p.175
Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
159-162
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Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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