Growth of 4H and 6H SiC Trenches and Around Stripe Mesas
p.131
p.131
Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth
p.135
p.135
Epitaxial Growth of SiC on α-SiC Using Si2Cl6+C3H8+H2 System
p.139
p.139
High Growth Rate of α-SiC by Sublimation Epitaxy
p.143
p.143
The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique
p.147
p.147
Domain Occurance in SiC Epitaxial Layers Grown by Sublimation
p.151
p.151
Epitaxy of High Quality SiC Layers by CST
p.155
p.155
Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC
p.159
p.159
High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy
p.163
p.163
The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
147-150
Citation:
Online since:
February 1998
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Сopyright:
© 1998 Trans Tech Publications Ltd. All Rights Reserved
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