The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

147-150

DOI:

10.4028/www.scientific.net/MSF.264-268.147

Citation:

A. Kakanakova-Georgieva et al., "The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique", Materials Science Forum, Vols. 264-268, pp. 147-150, 1998

Online since:

February 1998

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