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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Growth of 4H and 6H SiC Trenches and Around Stripe...

Growth of 4H and 6H SiC Trenches and Around Stripe Mesas

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

131-134

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.131

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Online since:

February 1998

Authors:

Nils Nordell, S. Karlsson, Andrey O. Konstantinov

Keywords:

Epitaxy, Growth Habit, Mesa, Non-Planar Substrate, Trench

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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