Growth of 4H and 6H SiC Trenches and Around Stripe Mesas

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

131-134

DOI:

10.4028/www.scientific.net/MSF.264-268.131

Citation:

N. Nordell et al., "Growth of 4H and 6H SiC Trenches and Around Stripe Mesas", Materials Science Forum, Vols. 264-268, pp. 131-134, 1998

Online since:

February 1998

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$35.00

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