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Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
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Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence
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Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
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Boron Compensation of 6H Silicon Carbide
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CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane
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Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
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Growth of 4H and 6H SiC Trenches and Around Stripe Mesas
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Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268CVD Growth and Characterisation of SiC Epitaxial...

CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

123-126

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.123

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Online since:

February 1998

Authors:

Christer Hallin, Alexsandre Ellison, Ivan G. Ivanov, Anne Henry, Nguyen Tien Son, Erik Janzén

Keywords:

Chemical Vapor Deposition (CVD), X-Ray Diffraction (XRD)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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