Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

115-118

Citation:

L.B. Rowland et al., "Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC", Materials Science Forum, Vols. 264-268, pp. 115-118, 1998

Online since:

February 1998

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