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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Nitrogen Doping Efficiency During Vapor Phase...

Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

115-118

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.115

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Online since:

February 1998

Authors:

L.B. Rowland, Albert A. Burk, C.D. Brandt

Keywords:

Doping, Epitaxial Growth, Nitrogen, Vapor-Phase Epitaxy (VPE)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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