Paper Titles

Dissolution and Growth of Silicon Carbide Crystals in Melt-Solutions
p.73

Sublimation Growth of Bulk β-SiC Crystals on (100) and (111) β-SiC Substrates
p.77

SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor
p.83

Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
p.89

Growth and Characterisation of SiC Power Device Material
p.97

Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
p.103

Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
p.107

Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence
p.111

Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
p.115

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Growth and Characterisation of SiC Power Device...

Growth and Characterisation of SiC Power Device Material

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

97-102

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.97

Citation:

Cite this paper

Online since:

February 1998

Authors:

Olof Kordina, Anne Henry, Erik Janzén

Keywords:

Chemical Vapor Deposition (CVD), Hot-Wall CVD, HTCVD, Mapping

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: