Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth
p.69
p.69
Dissolution and Growth of Silicon Carbide Crystals in Melt-Solutions
p.73
p.73
Sublimation Growth of Bulk β-SiC Crystals on (100) and (111) β-SiC Substrates
p.77
p.77
SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor
p.83
p.83
Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
p.89
p.89
Growth and Characterisation of SiC Power Device Material
p.97
p.97
Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
p.103
p.103
Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
p.107
p.107
Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence
p.111
p.111
Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
89-96
Citation:
Online since:
February 1998
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Сopyright:
© 1998 Trans Tech Publications Ltd. All Rights Reserved
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