Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

89-96

Citation:

R. Rupp et al., "Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications", Materials Science Forum, Vols. 264-268, pp. 89-96, 1998

Online since:

February 1998

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$38.00

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