Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container
p.61
p.61
A Coupled Finite Element Model for the Sublimation Growth of SiC
p.65
p.65
Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth
p.69
p.69
Dissolution and Growth of Silicon Carbide Crystals in Melt-Solutions
p.73
p.73
Sublimation Growth of Bulk β-SiC Crystals on (100) and (111) β-SiC Substrates
p.77
p.77
SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor
p.83
p.83
Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
p.89
p.89
Growth and Characterisation of SiC Power Device Material
p.97
p.97
Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
p.103
p.103
Sublimation Growth of Bulk β-SiC Crystals on (100) and (111) β-SiC Substrates
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
77-82
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Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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