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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Growth and Characterisation of Thick SiC Epilayers...

Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

103-106

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.103

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Online since:

February 1998

Authors:

Alexsandre Ellison, Tsunenobu Kimoto, Ivan G. Ivanov, Qamar-ul Wahab, Anne Henry, Olof Kordina, Jian Hui Zhang, Carl G. Hemmingsson, Chun-Yuan Gu, M.R. Leys, Erik Janzén

Keywords:

Deep Level, High Temperature CVD, Schottky Device, Shallow Dopants

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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