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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Growth of Thick Epitaxial 4H-SiC Layers by...

Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

107-110

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.107

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Online since:

February 1998

Authors:

Olof Kordina, Kenneth G. Irvine, Joseph J. Sumakeris, H.S. Kong, Michael J. Paisley, Calvin H. Carter Jr.

Keywords:

Chemical Vapor Deposition (CVD), Doping Uniformity, Hot-Wall CVD, Reproducibility, Thick Layers, Thickness Uniformity

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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