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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Impurity Incorporation Mechanism in...

Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

111-114

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.111

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Online since:

February 1998

Authors:

T. Yamamoto, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

(112O) Substrate, C/Si Ratio, Growth Temperature, Impurity Incorporation, Off-Angle, SIMS Depth Profile, Step-Controlled Epitaxy, Surface Polarity, Thermal Desorption

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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