Paper Titles

Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
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Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
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Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence
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Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
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Boron Compensation of 6H Silicon Carbide
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CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane
p.123

Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
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Growth of 4H and 6H SiC Trenches and Around Stripe Mesas
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Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Boron Compensation of 6H Silicon Carbide

Boron Compensation of 6H Silicon Carbide

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

119-122

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.119

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Online since:

February 1998

Authors:

Michael S. Mazzola, Stephen E. Saddow, Adolf Schöner

Keywords:

Boron Doping, Compensation, Epilayer, Solid Source Doping

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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