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Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
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Growth of 4H and 6H SiC Trenches and Around Stripe Mesas
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Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth
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Epitaxial Growth of SiC on α-SiC Using Si₂Cl₆+C₃H₈+H₂ System
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High Growth Rate of α-SiC by Sublimation Epitaxy
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Planar 6H-SiC p-n Junctions Prepared by Selective...

Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

135-138

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.135

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Online since:

February 1998

Authors:

Kai Christiansen, T. Dalibor, Reinhard Helbig, S. Christiansen, Horst P. Strunk

Keywords:

Chemical Vapor Deposition (CVD), Planar p-n Junction, Selective Epitaxial Growth, TEM

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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