Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth
p.135
p.135
Epitaxial Growth of SiC on α-SiC Using Si2Cl6+C3H8+H2 System
p.139
p.139
High Growth Rate of α-SiC by Sublimation Epitaxy
p.143
p.143
The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique
p.147
p.147
Domain Occurance in SiC Epitaxial Layers Grown by Sublimation
p.151
p.151
Epitaxy of High Quality SiC Layers by CST
p.155
p.155
Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC
p.159
p.159
High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy
p.163
p.163
Thick Film SiC Epitaxy for 'Filling Up' Micropipes
p.167
p.167
Domain Occurance in SiC Epitaxial Layers Grown by Sublimation
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
151-154
Citation:
Online since:
February 1998
Price:
Сopyright:
© 1998 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: