Paper Titles

Epitaxial Growth of SiC on α-SiC Using Si₂Cl₆+C₃H₈+H₂ System
p.139

High Growth Rate of α-SiC by Sublimation Epitaxy
p.143

The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique
p.147

Domain Occurance in SiC Epitaxial Layers Grown by Sublimation
p.151

Epitaxy of High Quality SiC Layers by CST
p.155

Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC
p.159

High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy
p.163

Thick Film SiC Epitaxy for 'Filling Up' Micropipes
p.167

A New Radiation Heated 4 Inch LPCVD System for β-SiC Heteroepitaxy
p.171

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Epitaxy of High Quality SiC Layers by CST

Epitaxy of High Quality SiC Layers by CST

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

155-158

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.155

Citation:

Cite this paper

Online since:

February 1998

Authors:

Takeru Yoshida, Y. Nishio, S.K. Lilov, Shigehiro Nishino

Keywords:

Close Space Technique, Epitaxial Growth, Sublimation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: