Epitaxy of High Quality SiC Layers by CST
p.155
p.155
Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC
p.159
p.159
High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy
p.163
p.163
Thick Film SiC Epitaxy for 'Filling Up' Micropipes
p.167
p.167
A New Radiation Heated 4 Inch LPCVD System for β-SiC Heteroepitaxy
p.171
p.171
Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane
p.175
p.175
Growth and Characterization of SiC Films on Large-Area Si Wafers by APCVD - Temperature Dependence
p.179
p.179
CVD Growth Mechanism of 3C-SiC on Si Substrates
p.183
p.183
Growth of Epitaxial Cubic SiC Thin Films Using Single Source Precursors
p.187
p.187
A New Radiation Heated 4 Inch LPCVD System for β-SiC Heteroepitaxy
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
171-174
Citation:
Online since:
February 1998
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Сopyright:
© 1998 Trans Tech Publications Ltd. All Rights Reserved
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