Paper Titles

A New Radiation Heated 4 Inch LPCVD System for β-SiC Heteroepitaxy
p.171

Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane
p.175

Growth and Characterization of SiC Films on Large-Area Si Wafers by APCVD - Temperature Dependence
p.179

CVD Growth Mechanism of 3C-SiC on Si Substrates
p.183

Growth of Epitaxial Cubic SiC Thin Films Using Single Source Precursors
p.187

Crystallinity of 3C-SiC Films Grown on Si Substrates
p.191

Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) Substrates
p.195

The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate
p.199

Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM
p.203

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Growth of Epitaxial Cubic SiC Thin Films Using...

Growth of Epitaxial Cubic SiC Thin Films Using Single Source Precursors

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

187-190

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.187

Citation:

Cite this paper

Online since:

February 1998

Authors:

Jin Hyo Boo, Soon Bok Lee, S.A. Ustin, W. Ho, H.P. Maruska, P.E. Norris, Il Ho Kim, C. Sung

Keywords:

Carbonization, Cubic SiC Thin Film, Single-Source Precursors, Supersonic Jet Epitaxy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: