Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) Substrates

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

195-198

DOI:

10.4028/www.scientific.net/MSF.264-268.195

Citation:

H.W. Shim et al., "Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) Substrates", Materials Science Forum, Vols. 264-268, pp. 195-198, 1998

Online since:

February 1998

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$35.00

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