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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Effects of Void Formation on Electrical and...

Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) Substrates

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

195-198

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.195

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Online since:

February 1998

Authors:

H.W. Shim, K.C. Kim, Y.H. Seo, Kee Suk Nahm, Eun Kyung Suh, H.J. Lee, Y.G. Hwang

Keywords:

Mobility, Photoluminescence (PL), Si Outdiffusion, Void Formation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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