Paper Titles

Crystallinity of 3C-SiC Films Grown on Si Substrates
p.191

Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) Substrates
p.195

The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate
p.199

Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM
p.203

Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates
p.207

Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVD
p.211

Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon
p.215

Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon
p.219

Fabrication of 3C-SiC on SiO₂ Structures Using Wafer Bonding Techniques
p.223

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Surface Morphology of 3C-SiC Heteroepitaxial...

Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

207-210

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.207

Citation:

Cite this paper

Online since:

February 1998

Authors:

Tetsuo Takahashi, Yuuki Ishida, Hajime Okumura, Sadafumi Yoshida, Toshihiro Sekigawa

Keywords:

3C-SiC, Antiphase Boundary (APB), APCVD, Etch-Pit-Density, Heteroepitaxy, LPCVD, Stacking Fault, Twin

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: