Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

215-218

DOI:

10.4028/www.scientific.net/MSF.264-268.215

Citation:

J.K.N. Lindner et al., "Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon", Materials Science Forum, Vols. 264-268, pp. 215-218, 1998

Online since:

February 1998

Export:

Price:

$35.00

In order to see related information, you need to Login.