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The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate
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Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM
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Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates
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Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVD
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Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon
p.215

Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon
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Fabrication of 3C-SiC on SiO₂ Structures Using Wafer Bonding Techniques
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Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100) Substrate
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Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Mechanisms of SiC Formation in the Ion Beam...

Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

215-218

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.215

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Online since:

February 1998

Authors:

J.K.N. Lindner, W. Reiber, B. Stritzker

Keywords:

Buried Layers, Epitaxy, Ion Beam Synthesis, Precipitation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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