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Growth of Epitaxial Cubic SiC Thin Films Using Single Source Precursors
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Crystallinity of 3C-SiC Films Grown on Si Substrates
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Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) Substrates
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The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate
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Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM
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Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates
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Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVD
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Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon
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Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Study of Initial Stage of SiC Growth on Si(100)...

Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

203-206

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.203

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Online since:

February 1998

Authors:

T. Takaoka, Haruo Saito, Y. Igari, I. Kusunoki

Keywords:

C₂H₄, Growth Mechanism, RHEED, Scanning Electron Microscope (SEM), X-Ray Photoelectron Spectroscopy (XPS)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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