Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane
p.175
p.175
Growth and Characterization of SiC Films on Large-Area Si Wafers by APCVD - Temperature Dependence
p.179
p.179
CVD Growth Mechanism of 3C-SiC on Si Substrates
p.183
p.183
Growth of Epitaxial Cubic SiC Thin Films Using Single Source Precursors
p.187
p.187
Crystallinity of 3C-SiC Films Grown on Si Substrates
p.191
p.191
Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) Substrates
p.195
p.195
The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate
p.199
p.199
Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM
p.203
p.203
Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates
p.207
p.207
Crystallinity of 3C-SiC Films Grown on Si Substrates
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
191-194
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Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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