Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

175-178

DOI:

10.4028/www.scientific.net/MSF.264-268.175

Citation:

K. W. Lee et al., "Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane", Materials Science Forum, Vols. 264-268, pp. 175-178, 1998

Online since:

February 1998

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$35.00

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