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CVD Growth Mechanism of 3C-SiC on Si Substrates
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Growth of Epitaxial Cubic SiC Thin Films Using Single Source Precursors
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Crystallinity of 3C-SiC Films Grown on Si Substrates
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Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) Substrates
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The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate
p.199

Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM
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Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates
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Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVD
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Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268The Mechanism of Void Formation in the Growth of...

The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

199-202

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.199

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Online since:

February 1998

Authors:

Y.H. Seo, K.C. Kim, H.W. Shim, Kee Suk Nahm, Eun Kyung Suh, H.J. Lee, Y.G. Hwang, D.-K. Kim, Byung Teak Lee

Keywords:

Rapid-Thermal CVD, Tetramethylsilane, Void Formation Mechanism, Void-Free 3C-SiC

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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