The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

199-202

DOI:

10.4028/www.scientific.net/MSF.264-268.199

Citation:

Y.H. Seo et al., "The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate", Materials Science Forum, Vols. 264-268, pp. 199-202, 1998

Online since:

February 1998

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$35.00

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