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Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM
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Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates
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Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVD
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Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon
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Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon
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Fabrication of 3C-SiC on SiO₂ Structures Using Wafer Bonding Techniques
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Effect of Substrate Bias on 3C-SiC Deposition on...

Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVD

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

211-214

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.211

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Online since:

February 1998

Authors:

Hideki Shimizu, M. Shiga

Keywords:

3C-SiC, Carbonization, Epitaxial Growth, Low Substrate Temperature, Plasma Assisted CVD, Substrate Bias

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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