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Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVD
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Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon
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Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon
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Fabrication of 3C-SiC on SiO₂ Structures Using Wafer Bonding Techniques
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Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100) Substrate
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Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates
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Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System
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Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Fabrication of 3C-SiC on SiO2 Structures Using...

Fabrication of 3C-SiC on SiO₂ Structures Using Wafer Bonding Techniques

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

223-226

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.223

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Online since:

February 1998

Authors:

Christian A. Zorman, K.N. Vinod, A.A. Yasseen, Mehran Mehregany

Keywords:

APCVD, Defect Density, Mechanical Polishing, Poly-Silicon, SiO₂, Wafer Bonding

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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