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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Heteroepitaxial Growth of SiC on Si by Gas Source...

Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

239-242

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.239

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Online since:

February 1998

Authors:

Jin Ming Chen, A.J. Steckl, Mark J. Loboda

Keywords:

Molecular Beam Epitaxy (MBE), Silacyclobutane, Silicon, Silicon Carbide (SiC)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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