Paper Titles

Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates
p.231

Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System
p.235

Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane
p.239

Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVD
p.243

Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE
p.247

Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy
p.251

Improved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBE
p.255

Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE
p.259

Electronic Properties of SiC Polytypes and Heterostructures
p.265

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Formation of Pyramidal Pits at the Interface of...

Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

247-250

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.247

Citation:

Cite this paper

Online since:

February 1998

Authors:

Jan Philipp Schmidt-Ewig, T. Troffer, Kai Christiansen, S. Christiansen, Reinhard Helbig, Gerhard Pensl, Horst P. Strunk

Keywords:

3C-SiC/Si Interface Formation, Misfit Strain Relaxation, Molecular Beam Epitaxy (MBE)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: