Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

247-250

DOI:

10.4028/www.scientific.net/MSF.264-268.247

Citation:

J. P. Schmidt-Ewig et al., "Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE", Materials Science Forum, Vols. 264-268, pp. 247-250, 1998

Online since:

February 1998

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