Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVD

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

243-246

DOI:

10.4028/www.scientific.net/MSF.264-268.243

Citation:

M. Uchida et al., "Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVD", Materials Science Forum, Vols. 264-268, pp. 243-246, 1998

Online since:

February 1998

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