Paper Titles

Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System
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Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane
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Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVD
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Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE
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Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy
p.251

Improved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBE
p.255

Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE
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Electronic Properties of SiC Polytypes and Heterostructures
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Band Structure Interpretation of the Optical Transitions between Low-Lying Conduction Bands in n-Type Doped SiC Polytypes
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Growth of SiC Layers on (111) Si by Solid Source...

Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

251-254

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.251

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Online since:

February 1998

Authors:

Joerg Pezoldt, Thomas Stauden, Volker Cimalla, Gernot Ecke, Henry Romanus, G. Eichhorn

Keywords:

AES, Atomic Force Microscope (AFM), Epitaxy, MBE, Polytypism, RHEED

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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