Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

251-254

DOI:

10.4028/www.scientific.net/MSF.264-268.251

Citation:

J. Pezoldt et al., "Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy", Materials Science Forum, Vols. 264-268, pp. 251-254, 1998

Online since:

February 1998

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$35.00

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