Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE
p.247
p.247
Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy
p.251
p.251
Improved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBE
p.255
p.255
Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE
p.259
p.259
Electronic Properties of SiC Polytypes and Heterostructures
p.265
p.265
Band Structure Interpretation of the Optical Transitions between Low-Lying Conduction Bands in n-Type Doped SiC Polytypes
p.271
p.271
Calculated Density of States and Carrier Concentration in 4H- and 6H-SiC
p.275
p.275
Theoretical Studies on Defects in SiC
p.279
p.279
An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking Faults
p.283
p.283
Electronic Properties of SiC Polytypes and Heterostructures
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
265-270
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Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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