Paper Titles

Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE
p.259

Electronic Properties of SiC Polytypes and Heterostructures
p.265

Band Structure Interpretation of the Optical Transitions between Low-Lying Conduction Bands in n-Type Doped SiC Polytypes
p.271

Calculated Density of States and Carrier Concentration in 4H- and 6H-SiC
p.275

Theoretical Studies on Defects in SiC
p.279

An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking Faults
p.283

Calculation of Nonlinear Optical Susceptibilities for Different Polytypes of Silicon Carbide
p.287

Comparative Monte Carlo Study of Electron Transport in 3C, 4H and 6H Silicon Carbide
p.291

Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC
p.295

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Theoretical Studies on Defects in SiC

Theoretical Studies on Defects in SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

279-282

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.279

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Online since:

February 1998

Authors:

Peter Deák, Adam Gali, J. Miró, R. Gutierrez, A. Sieck, Thomas Frauenheim

Keywords:

Electronic Structure, Intrinsic Defect, Nitrogen, Oxygen, Stability

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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