Paper Titles

Electronic Properties of SiC Polytypes and Heterostructures
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Band Structure Interpretation of the Optical Transitions between Low-Lying Conduction Bands in n-Type Doped SiC Polytypes
p.271

Calculated Density of States and Carrier Concentration in 4H- and 6H-SiC
p.275

Theoretical Studies on Defects in SiC
p.279

An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking Faults
p.283

Calculation of Nonlinear Optical Susceptibilities for Different Polytypes of Silicon Carbide
p.287

Comparative Monte Carlo Study of Electron Transport in 3C, 4H and 6H Silicon Carbide
p.291

Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC
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The Effects of Interfacial Dipoles on the Properties of SiC-Group III-Nitride Hetero-Structures
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268An ab initio Study of Native Defects in Cubic SiC:...

An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking Faults

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Silicon Carbide, III-Nitrides and Related Materials

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

283-286

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.283

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Online since:

February 1998

Authors:

A. Zywietz, P. Käckell, J. Furthmüller, Friedhelm Bechstedt

Keywords:

Defect, First-Principle Calculations, Stacking Fault, Vacancy

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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