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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Calculation of the Anisotropy of the Hall Mobility...

Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC

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Silicon Carbide, III-Nitrides and Related Materials

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

295-298

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.295

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Online since:

February 1998

Authors:

Takahiro Kinoshita, Kohei M. Itoh, J. Muto, M. Schadt, Gerhard Pensl, K. Takeda

Keywords:

4H-SiC, 6H-SiC, Anisotropy, Hall-Effect, Mobility

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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