Paper Titles

Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC
p.295

The Effects of Interfacial Dipoles on the Properties of SiC-Group III-Nitride Hetero-Structures
p.299

Pressure-Dependent Dynamical and Dielectric Properties of GaN and AlN
p.303

Theoretical and Experimental Study of the Lattice-Dynamical Properties of Cubic GaN
p.307

Electronic States of BC₂N Heterodiamond (111) Superlattices
p.311

From Precursor Atoms Towards Hetero-Phases: Strain-Dynamics Induced Carbon-Rich Si_1-xC_x Phases
p.315

Large Unit Cell Superstructures on Hexagonal SiC-Sufaces Studied by LEED, AES and STM
p.321

Surface Reconstructions of 6H-SiC(0001) and Surface-Structure-Controlled Epitaxial Growth
p.327

Electronic and Atomic Structure of the C-Terminated 6H-SiC Surface
p.331

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Electronic States of BC2N Heterodiamond (111)...

Electronic States of BC₂N Heterodiamond (111) Superlattices

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

311-314

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.311

Citation:

Cite this paper

Online since:

February 1998

Authors:

Y. Tateyama, K. Kusakabe, T. Ogitsu, S. Tsuneyuki

Keywords:

Band Edge States, Boron Carbon Nitride Superlattice, First-Principle Calculations, New Material Design

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: