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Band Structure Interpretation of the Optical Transitions between Low-Lying Conduction Bands in n-Type Doped SiC Polytypes
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Calculated Density of States and Carrier Concentration in 4H- and 6H-SiC
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Theoretical Studies on Defects in SiC
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An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking Faults
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Calculated Density of States and Carrier...

Calculated Density of States and Carrier Concentration in 4H- and 6H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

275-278

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.275

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Online since:

February 1998

Authors:

C. Persson, Ulf Lindefelt

Keywords:

Band Structure, Carrier Concentration, Density of States (DOS)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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