Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

235-238

DOI:

10.4028/www.scientific.net/MSF.264-268.235

Citation:

T. Hatayama et al., "Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System", Materials Science Forum, Vols. 264-268, pp. 235-238, 1998

Online since:

February 1998

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