Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon
p.219
p.219
Fabrication of 3C-SiC on SiO2 Structures Using Wafer Bonding Techniques
p.223
p.223
Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100) Substrate
p.227
p.227
Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates
p.231
p.231
Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System
p.235
p.235
Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane
p.239
p.239
Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVD
p.243
p.243
Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE
p.247
p.247
Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy
p.251
p.251
Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
235-238
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Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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