Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100) Substrate

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

227-230

DOI:

10.4028/www.scientific.net/MSF.264-268.227

Citation:

G. Ferro et al., "Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100) Substrate", Materials Science Forum, Vols. 264-268, pp. 227-230, 1998

Online since:

February 1998

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$35.00

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