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Fabrication of 3C-SiC on SiO₂ Structures Using Wafer Bonding Techniques
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Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100) Substrate
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Growth Mode and Kinetics of Atmospheric Pressure...

Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100) Substrate

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

227-230

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.227

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Online since:

February 1998

Authors:

Gabriel Ferro, H. Vincent, Yves Monteil, Didier Chaussende, J. Bouix

Keywords:

Chemical Vapor Deposition (CVD), Epitaxy, Kinetic, Silicon

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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