Epitaxial Growth of SiC on α-SiC Using Si2Cl6+C3H8+H2 System

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

139-142

Citation:

S. Nishino et al., "Epitaxial Growth of SiC on α-SiC Using Si2Cl6+C3H8+H2 System", Materials Science Forum, Vols. 264-268, pp. 139-142, 1998

Online since:

February 1998

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$38.00

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