CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane
p.123
p.123
Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
p.127
p.127
Growth of 4H and 6H SiC Trenches and Around Stripe Mesas
p.131
p.131
Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth
p.135
p.135
Epitaxial Growth of SiC on α-SiC Using Si2Cl6+C3H8+H2 System
p.139
p.139
High Growth Rate of α-SiC by Sublimation Epitaxy
p.143
p.143
The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique
p.147
p.147
Domain Occurance in SiC Epitaxial Layers Grown by Sublimation
p.151
p.151
Epitaxy of High Quality SiC Layers by CST
p.155
p.155
Epitaxial Growth of SiC on α-SiC Using Si2Cl6+C3H8+H2 System
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
139-142
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Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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