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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Homoepitaxial Growth of 4H- and 6H-SiC in a...

Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

127-130

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.127

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Online since:

February 1998

Authors:

Frank Wischmeyer, D. Leidich, E. Niemann

Keywords:

Atomic Force Microscope (AFM), Chemical Vapor Deposition (CVD), Electrical Characterisation, Homoepitaxy

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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