Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

127-130

DOI:

10.4028/www.scientific.net/MSF.264-268.127

Citation:

F. Wischmeyer et al., "Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor", Materials Science Forum, Vols. 264-268, pp. 127-130, 1998

Online since:

February 1998

Export:

Price:

$35.00

In order to see related information, you need to Login.